http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990060899-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225 |
| filingDate | 1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990060899-A |
| titleOfInvention | Method of forming insulating film of semiconductor device |
| abstract | 1. Technical field to which the invention described in the claims belongsn n n The present invention relates to a method for forming an insulating film of a semiconductor device, and more particularly to a method for forming an insulating film using a high density plasma.n n n 2. Technical problem that the invention tries to solven n n If the insulating film is formed of a high density plasma using argon gas during the manufacturing process of the semiconductor device, and the thermal process is performed at a temperature higher than the initial deposition temperature during the subsequent process, the argon gas contained in the insulating film is outgassed, It is intended to solve a problem in which voids are generated in a peeling shape and a contact hole.n n n 3. Summary of the solution of the inventionn n n An insulating film having a low argon content is formed by using a high density plasma using an inert gas argon and helium mixed gas.n n n 4. Important uses of the inventionn n n Applied in semiconductor device manufacturing. |
| priorityDate | 1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.