http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990057803-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 1997-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-19990057803-A |
titleOfInvention | Semiconductor device manufacturing method |
abstract | TECHNICAL FIELD The present invention relates to the field of semiconductor manufacturing, and in particular, to lithography processes for forming various patterns constituting semiconductor integrated circuits. SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a semiconductor device using an antireflection film which ensures uniform reflectance and is easily removed after processing. A characteristic semiconductor device manufacturing method provided from the present invention for this purpose is a semiconductor device manufacturing method for patterning a wafer or a predetermined lower layer formed on the wafer by using a photoresist, wherein the anti-reflection film is formed on the wafer or the lower layer. And depositing the nonvolatile polymer using a gas comprising carbon. |
priorityDate | 1997-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.