http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990055145-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990055145-A |
| titleOfInvention | Titanium Silicide Film Formation Method |
| abstract | 1. TECHNICAL FIELD OF THE INVENTIONn n n The present invention relates to the field of semiconductor manufacturing.n n n 2. The technical problem to be solved by the inventionn n n It is to provide a method of forming a titanium silicide film having a small size compared to the prior art to implement a fine line width.n n n 3. Summary of Solution to Inventionn n n The present invention forms a large amount of titanium silicide nuclei on C49 by pulsed scanning of an excimer laser having an XeCl source before rapid heat treatment.n n n 4. Important uses of the inventionn n n Used to manufacture semiconductor devices. |
| priorityDate | 1997-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.