http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990055129-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990055129-A |
| titleOfInvention | Method for forming contact hole in semiconductor device |
| abstract | The present invention provides a method for forming a contact hole in a semiconductor device, in which at least two layers of insulating films are etched to form contact holes, the method comprising: forming a photoresist pattern for forming a first contact hole on a first interlayer insulating film, and forming a contact hole Isotropically etches a portion of the photoresist layer so that the photoresist pattern opens a region larger than the contact hole region defined by the mask, and then forms the first contact hole by etching the first interlayer insulating layer using the photoresist pattern as an etch mask. A contact plug is embedded in the second plug to form a second contact hole that exposes the contact plug. This increases the mask alignment margin in the photoresist pattern forming step for forming the second contact hole. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100477786-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030050845-A |
| priorityDate | 1997-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.