http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990051863-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1997-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990051863-A |
| titleOfInvention | Method of forming interlayer insulating layer of semiconductor device |
| abstract | The present invention relates to a method for forming an interlayer insulating layer of a semiconductor device, comprising: sequentially forming a wiring, a first adhesion layer, and an etch stop layer in a substrate; and forming the wiring, the first adhesion layer, and an etch stop layer on the substrate. A first dielectric layer is formed by depositing a thick dielectric material having a low dielectric constant and having good flow characteristics and etching back by chemical mechanical polishing until the etch stop layer is exposed so as to remain only between the interconnections. Selectively removing the etch stop layer and depositing a material having the same thickness as that of the first insulating layer on the first adhesive layer and the first insulating layer to a predetermined thickness to form a second insulating layer; The process of forming a 2nd adhesion layer on a 2nd insulating layer is provided. Therefore, the first and second adhesion layers having a higher dielectric constant than the second insulating layer having a flat surface and having a low dielectric constant between the wiring and the upper wiring are formed by forming the second insulating layer after the first insulating layer is planarized. Since the formation is thick, the dielectric constant of the entire interlayer insulating layer is reduced, thereby improving the operation speed of the device. |
| priorityDate | 1997-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 |
Total number of triples: 13.