http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990048789-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D207-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D207-408 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D207-444 |
| filingDate | 1997-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990048789-A |
| titleOfInvention | Imide-based monomer for silylation photoresist, copolymer resin using this monomer and method for producing photoresist pattern using this resin |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an imide-based monomer for a silicide photosensitive film, a copolymer resin from the monomer, and a method for producing a photosensitive film pattern using the resin, wherein the photosensitive film pattern generated when forming a fine pattern using an ultraviolet light source such as KrF or ArF In order to prevent roughness or lack of resolution, the photoresist formed on the etched layer may include an imide having a high heat resistance, and may form a fine pattern using a chemically amplified photoresist capable of resolving even a small amount of energy. It is a technology that enables high integration of semiconductor devices. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010011765-A |
| priorityDate | 1997-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.