| abstract |
In the semiconductor device manufacturing method, a copper wiring film is formed in the interlayer insulating film by the damascene method. An insulating protective film is formed on the copper wiring film and the interlayer insulating film. Then, the opening is formed in the insulating protective film. After that, an Al-based film is deposited on the insulating protective film to fill the openings. In this case, the Al-based film can be patterned. Alternatively, the CMP (chemical mechanical polishing) method may be performed on the Al-based film to embed the Al-based film in the opening. |