http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990031428-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990031428-A |
| titleOfInvention | Manufacturing method of capacitor |
| abstract | The present invention relates to a method for manufacturing a capacitor suitable for forming a dielectric film free of defects using a plasma-treated gas. The method for manufacturing a capacitor of the present invention for achieving the above object includes a process of forming a storage node on a substrate; And forming a dielectric film on the nitride film by forming a nitride film on the storage node, performing plasma treatment on the gas containing oxygen or nitrogen atoms, and forming a plate node on the dielectric film. do. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190037567-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100492901-B1 |
| priorityDate | 1997-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 12.