http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990031039-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
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filingDate 1997-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1999-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19990031039-A
titleOfInvention Resist Composition Containing Crosslinking Photosensitive Agent
abstract The resist composition containing the crosslinking type photosensitive agent of the present invention is designed to have a structure in which the photoresist is directly crosslinked to the polymer material so that the resist coating structure is crosslinked. A polymer resin having excellent dissolution rate in aqueous alkali solution is used. The resist composition of the present invention is a composition having a property that crosslinking is formed by heat after formation of a resist film, and the crosslinking can be decrosslinked by photolysis. Polymer resins include homopolymers or copolymers of polyhydroxystyrenes, including atactic polyhydroxystyrene (PHST) homopolymers and syndiotactic PHST homopolymers; And copolymers containing comonomers such as methyl methacrylate and methyl acrylate.n n n As the photosensitizer used in the present invention, there are an onium photosensitizer and a non-onium photosensitizer, and the onium photosensitizer includes a sulfonium dicrosslinking type photosensitive agent having two vinyloxy groups and three vinyloxy groups. There is a sulfonium-based tricrosslinking photosensitive agent having. The resist composition of the present invention may further contain a dissolution inhibitor to impart a solvent inhibiting function of the composition.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100520182-B1
priorityDate 1997-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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