http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990027635-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990027635-A |
| titleOfInvention | Multilayer Wiring of Semiconductor Device and Formation Method |
| abstract | The present invention relates to a multilayer wiring and a method of forming the semiconductor device suitable for improving process yield by preventing the problems caused by the interference phenomenon when the multilayer wiring is formed by using a stacked via contact. The method includes a first wiring layer formed in a predetermined region of a semiconductor substrate, a first interlayer insulating layer formed to have contact holes on the first wiring layer, a first via contact formed in the contact hole to be in contact with the first wiring layer, and A second wiring layer formed on the first interlayer insulating layer to expose the first via contact, a first insulating layer formed on the second wiring layer and the first interlayer insulating layer, and a first insulating layer on the first interlayer insulating layer A second insulating layer formed on the sidewall, sidewall spacers formed on side surfaces of the first insulating layer and the second insulating layer, and the sidewall spacers to be in contact with the first via contact. A tungsten via contact formed therebetween, a second interlayer insulating layer formed to have contact holes on the tungsten via contact, a second via contact formed in the contact hole to contact the tungsten via contact, and the second via contact and And a third wiring layer in contact. |
| priorityDate | 1997-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.