http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990025528-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990025528-A |
| titleOfInvention | Device isolation method of semiconductor device using trench |
| abstract | The present invention discloses a device isolation method of a semiconductor device.n n n In the process of forming a trench type isolation layer on a semiconductor substrate, the present invention relates to a material layer formed on a back surface where a trench of the semiconductor substrate is not formed. That is, the nitride film formed on the back side of the semiconductor substrate is removed after the trench is filled with the device isolation insulating film and before the entire surface is planarized. In this case, the nitride film formed on the front surface of the semiconductor substrate is covered with a material film having a high etching selectivity with respect to the nitride film, and thus can be prevented from being damaged by the chemical. Thus, the nitride film can be protected from atypical defects. In addition, the process of manufacturing the semiconductor device can be reduced by removing the nitride film formed on the rear surface of the semiconductor substrate as described above. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100442854-B1 |
| priorityDate | 1997-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 11.