http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990025490-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990025490-A |
| titleOfInvention | Metal wiring of semiconductor device and method of forming the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal wiring of a semiconductor device and a method of forming the semiconductor device for improving the reliability of wiring, comprising: an insulating film formed with a trench at a predetermined depth on a substrate; a first conductive layer formed inside the trench; And a second conductive layer surrounding the first conductive layer and formed inside the trench, and a third conductive layer surrounding the second conductive layer and formed inside the trench. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100808794-B1 |
| priorityDate | 1997-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.