Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-923 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-09 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-225 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 |
filingDate |
1996-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-19990022636-A |
titleOfInvention |
Shallow Depth Formation Method |
abstract |
A doping sequence that reduces the cost and complexity of forming source / drain regions (11, 12) in complementary metal oxide silicon (CMOS) integrated circuit technology. The process is very shallow in depth, with the interference effects generated by patterned excimer laser annealing, dopant-saturated spin-on glass 21, silicide film contact structures 18, 19, and thin dielectric layers. Source and drain junctions 23 and 24 exhibiting low sheet and contact resistance. This process can be accomplished without using photolithography at all and without using an expensive vacuuming apparatus. The benefits of this process are broad and yield loss due to dopant contact at very shallow depths is eliminated. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100477473-B1 |
priorityDate |
1995-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |