http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990021970-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-937 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7613 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-05 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 1997-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990021970-A |
| titleOfInvention | Tunnel effect device and its manufacturing method |
| abstract | The tunnel effect device comprises an input electrode 3, an output electrode 4 and N control electrodes 5 separated into tunneling barriers, wherein the space between the barriers and the barriers comprises molecules forming tunneling junctions. Arranged as an ordered structure of clusters. Each control electrode 5 is located in the region of the aligned structure of molecules and clusters 2. The dimensions and properties of the molecules and clusters provide single electron correlated electron tunneling at relatively high (room temperature) temperatures. The tunnel effector acts on the basis of controlled correlated electron tunneling. The ability to control tunneling currents paves the way for building various electronic gate circuits based on single-electron tunneling junctions, thus paving the way for the creation of single electronic analog and digital devices, especially high-sensitivity sensors. A method for providing a tunnel effect device comprises forming an input electrode, an output electrode and a control electrode on a solid state substrate, and then inert dielectric molecular matrix having active molecules and clusters formed in the order of localization centers of the tunneling electrons. Forming a single electron tunneling junctions. The effect of discrete tunneling of individual current carriers through the tunneling barriers at room temperature used in the tunnel effector can also be applied to single electron transistors, constructing single electron gate circuits where logics 1 and 0 correspond to the presence or absence of electrons. It can be used to |
| priorityDate | 1996-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.