http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990021284-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990021284-A |
| titleOfInvention | Contact hole cleaning method of semiconductor device |
| abstract | The present invention relates to a contact hole cleaning method of a semiconductor device capable of improving the cleaning effect of the contact hole.n n n According to the present invention, a wafer in which contact holes are formed through at least one film is mixed with 25 to 35% by weight of isopropyl alcohol, 2 to 4% by weight of hydrogen peroxide, 0.05 to 0.25% by weight of hydrogen fluoride, and deionized water in the remaining amount. And a step of cleaning the contact hole by introducing the cleaning liquid composition into the reservoir, and releasing the wafer from the inside of the reservoir to the outside after cleaning the contact hole for a predetermined time.n n n Therefore, impurities such as a natural oxide film, a polymer, copper, and gold existing in the contact hole can be easily removed, thereby causing problems such as an electrical malfunction when operating the completed semiconductor device by a subsequent process. There is an effect that can be prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100842746-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100681677-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100702128-B1 |
| priorityDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.