http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990021109-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990021109-A |
| titleOfInvention | Semiconductor Device Separation Method |
| abstract | The present invention provides a semiconductor device separation method that prevents foreign matter intrusion, wafer level warpage, and stress by continuously performing a plurality of wafer processes in one plasma chemical vapor deposition apparatus using a single plasma chemical vapor deposition (PECVD) apparatus. .n n n In the device isolation process, the deposition of the pad nitride film and the surface oxygen plasma treatment of the nitride film use a single plasma chemical vapor deposition (PECVD) apparatus. Further, before the pad oxide film is formed, the removal of the native oxide film present on the surface of the bulk wafer is removed using a hydrogen gas remote plasma in the same apparatus, and then the pad oxide film is deposited. After the pad oxide film deposition is completed, the wafer is changed into a nitride film deposition gas at the position, and the plasma is turned on to produce a silicon nitride film having a desired thickness. After the deposition of the pad nitride film is completed, the reaction chamber is returned to oxygen or N20 gas, which is a gas for plasma treatment. The filled wafer is processed and the process wafer comes out of the apparatus while the surface of the pad nitride film is oxidized. In this case, the warpage of the wafer due to the back side thin film is eliminated due to the plasma chemical vapor deposition characteristic deposited on the front side. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101026383-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010074387-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100731102-B1 |
| priorityDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.