http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990020392-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| filingDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990020392-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | 1. TECHNICAL FIELD OF THE INVENTIONn n n The present invention relates to a method for forming a metal wiring of a semiconductor device using a copper thin film.n n n 2. The technical problem to be solved by the inventionn n n To prevent under cut when forming copper wiring in an ultra high density integrated circuit.n n n 3. Summary of Solution to Inventionn n n In order to prevent the undercut of the copper wiring, the etching process is performed by dividing the primary and secondary by the plasma etching method using the electron cyclotron resonance etching apparatus.n n n 4. Important uses of the inventionn n n Applied to metal wiring formation of semiconductor devices. |
| priorityDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.