http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990015472-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990015472-A |
| titleOfInvention | Method of forming interlayer dielectric film of semiconductor device |
| abstract | A method of forming a metal interlayer insulating film of a semiconductor device is disclosed. The method comprises the steps of forming a plurality of lower metal interconnections at predetermined intervals on a semiconductor substrate, forming a capping oxide film on the entire surface of the resultant product on which the plurality of lower metal interconnections are formed, and formed between the plurality of lower metal interconnections. And sequentially forming a plurality of condensed SOG films inside the groove surrounded by the capping oxide film. |
| priorityDate | 1997-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 11.