http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990012972-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18377 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
filingDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1999-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-19990012972-A |
titleOfInvention | Surface light laser device with integrated photodetector for monitor |
abstract | Disclosed is a surface light laser device for a monitor photodetector integrated with a structure capable of employing an automatic output control circuit for controlling the amount of emitted light of a surface light laser.n n n The disclosed photodetector integrated surface light laser device for a monitor includes first and second electrodes formed on a substrate and a lower reflector layer active layer and an upper reflector layer sequentially stacked on the substrate, and a lower surface of the substrate and a portion of an upper reflector layer, respectively. And a surface light laser that emits light in a stacking direction by a driving current applied through the second electrode, and a photodetector for monitor that is formed on the upper reflector layer to absorb a portion of incident light and outputs a detection signal. The photodetector for a monitor includes a first impurity semiconductor layer formed on an upper reflector layer and a second impurity semiconductor layer formed on an upper portion of the first impurity semiconductor layer and a second impurity semiconductor layer formed on an intrinsic semiconductor layer; A surface light laser stacked between the third and fourth electrodes, the upper reflector layer, and the first impurity semiconductor layer respectively formed on the second impurity semiconductor layer And an insulating layer which electrically insulates the monitor photodetector and passes the laser light therethrough. |
priorityDate | 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 |
Total number of triples: 15.