http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990011945-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990011945-A |
| titleOfInvention | Light emitting diodes and manufacturing method |
| abstract | The present invention provides a silicon substrate, a porous silicon layer formed on one surface of the silicon substrate and having a pn junction, a polymer layer formed on an outer surface of the porous silicon layer, and a different surface of the silicon substrate and the polymer layer, respectively. A light emitting diode comprising a formed first contact point and a second contact point, the light emitting diode having a carrier transfer layer including polyaniline formed between the porous silicon layer and the polymer layer, and a method of manufacturing the light emitting diode according to the present invention. The diode forms a carrier transfer layer between the porous silicon layer and the polymer layer to reduce the band gap between the porous silicon layer and the polymer layer, thereby smoothing the movement of the carrier and consequently improving the luminous efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543470-B2 |
| priorityDate | 1997-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.