http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990008513-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990008513-A |
| titleOfInvention | How to prevent charge up in gate oxide |
| abstract | The present invention relates to a method of preventing charge-up generated in a gate oxide film during an etching process in an process chamber in which an ESC chuck is used. Thereafter, the etching process is performed, and when the etching process is completed, the power is turned off, the purge gas is supplied to the process chamber to discharge the charged charges to the gate oxide film, and the ejector pin is operated up. And separating the wafer from which the gate oxide film has been discharged from the ESC chuck surface.n n n Therefore, as the charge accumulated in the wafer and the ES chuck is flowed into the purge gas, the charge-up phenomenon of the gate oxide film can be prevented, thereby improving the characteristics and yield of the product. |
| priorityDate | 1997-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 11.