http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990006184-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990006184-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | The present invention discloses a method for forming metal wiring in a semiconductor device.n n n Disclosed is a semiconductor device in which a barrier metal film, a tungsten metal film, and an antireflection film are sequentially formed on a semiconductor substrate, and the metal wiring is formed by sequentially etching a predetermined portion of the antireflection film, the tungsten metal film, and the barrier metal film. In the metal wiring forming method of, the tungsten metal film is characterized in that the etching at a temperature of -50 to 10 ℃ to prevent volatilization of the etching by-products. |
| priorityDate | 1997-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.