http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990006049-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990006049-A |
| titleOfInvention | How to Form Multilayer Metal Wiring |
| abstract | The present invention relates to a method for forming a multi-layered metal wiring, wherein the oxide film formed by the high density plasma is controlled to have the same etching rate as that of the upper oxide film, and the upper oxide film is formed to be the same as the etching rate of the high density plasma oxide film to form uniform vias. It is a method of removing the defective element which occurs at the time of subsequent metal wiring deposition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150145942-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150145943-A |
| priorityDate | 1997-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23987 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577374 |
Total number of triples: 18.