http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990004658-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990004658-A |
| titleOfInvention | Semiconductor device and manufacturing method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a capacitor and a method of manufacturing the same. To achieve the above object, a semiconductor device having a capacitor on a semiconductor substrate according to the present invention includes a metal barrier layer and a tungsten. The layer and the anti-reflection film are sequentially stacked, and the tungsten layer is etched a predetermined portion more than the metal barrier layer and the anti-reflection film, so that the lower electrode has a capacitor having an I-shape. In addition, a method for manufacturing a semiconductor device having a capacitor on a semiconductor substrate according to the present invention, comprising the steps of: laminating a metal barrier layer, a tungsten layer and an anti-reflection film in order on a planarized insulating film of the semiconductor substrate; Forming a mask pattern on the anti-reflection film to form a lower electrode of the capacitor; and etching the metal barrier layer, the tungsten layer, and the anti-reflection film in order to form a capacitor of the lower electrode, wherein the tungsten layer is Etching a predetermined portion more than the metal barrier layer and the anti-reflection film to form the lower electrode in an I-shape. |
| priorityDate | 1997-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.