http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990003716-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990003716-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention provides a method of manufacturing a semiconductor device capable of easily forming a metal wiring corresponding to high integration without patterning a material having a low specific resistance and excellent electrical extreme characteristics by dry etching.n n n The metal wiring of the semiconductor element according to the present invention is formed as follows. First, a semiconductor substrate on which a conductive layer pattern is formed is provided, a flattened first insulating film is formed on the substrate, and then a second insulating film having a predetermined thickness is formed on the first insulating film. Then, the second and first insulating layers are etched to expose the predetermined portion of the conductive layer pattern, thereby forming contact holes, and the second insulating layers on both sides of the contact holes are etched to form predetermined line pattern holes. Thereafter, a metal wiring material film is filled in the line pattern hole and the contact hole to form a metal wiring in contact with the conductive layer pattern. |
| priorityDate | 1997-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.