http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980086922-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1998-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980086922-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | Provided are a semiconductor device and a method of manufacturing the same, which can produce a semiconductor device having a larger storage capacity of a stre electrode with a simple process without reducing the degree of integration.n n n Insulating films 4, 5, 6 are formed on the semiconductor substrate 1, contact holes 7 are formed in the insulating films 4, 5, 6, and the semiconductor substrate 1 is formed through the contact holes 7; A streak electrode 8a having a structure consisting of a tubular portion extending in the horizontal direction on the insulating film 6 and a fin 11 horizontally integrally formed inside the tubular portion; The dielectric film 9 covering the surface of the 8a is formed, and the plate electrode 10 is formed on the strip electrode 8a covered by the dielectric film 9 to form a semiconductor device. |
| priorityDate | 1997-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.