http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980085824-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980085824-A |
| titleOfInvention | Wiring Formation Method of Semiconductor Device |
| abstract | A method of forming a wiring of a semiconductor device suitable for preventing loss of a wiring layer. The method of forming a wiring of a semiconductor device includes the steps of sequentially depositing a metal wiring layer and an antireflection film on an insulating layer, and a photosensitive film for wiring formation on the antireflection film. O 2, including the argon to the process and the anti-reflection film and a metal wiring layer etching step, the chlorine continuously after the H 2 O vapor plasma cleaning in a plasma etching process after continuous to in chlorine plasma state the photosensitive film as a mask to form a And removing the polymeric residue that may occur on the anti-reflection film in the plasma. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7365724-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7667680-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8035594-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100741921-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100824992-B1 |
| priorityDate | 1997-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.