http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980085264-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980085264-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a metal wiring of a semiconductor device to simplify the manufacturing process of a multilayer metal wiring, the method comprising: forming a first metal wiring having a predetermined width on a semiconductor substrate, and forming a surface of the first metal wiring; Forming an insulating film having a contact hole to expose the predetermined portion, forming first and second conductive layers on the entire surface of the substrate including the contact hole, and plugging the plug on the second conductive layer inside the contact hole. Forming a layer, removing the first and second conductive layers excluding the plug periphery, etching the insulating layer to a predetermined depth from a surface, and forming a second metal wiring on the substrate to be in contact with the plug. Forming comprising the step of forming. |
| priorityDate | 1997-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.