http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980082917-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980082917-A |
| titleOfInvention | Row Address Buffers in Semiconductor Memory Devices |
| abstract | The present invention relates to a semiconductor memory device, and more particularly, to a row address buffer, which detects a transition of a row address signal in a self-refresh mode, maintains a row address signal level that does not transition, and maintains the row address. A semiconductor memory device for refreshing data of a cell to which a word line corresponding to a signal belongs, comprising: word lines arranged in a row direction; Column lines arranged in a column direction; A memory cell array in which cells are formed in regions where the word lines and column lines intersect to store data; A plurality of counters for performing counting by receiving a predetermined signal from the outside; It is synchronized with a row address strobe signal applied from the outside, converts a TTL level row address signal into a CMOS level row address signal, and outputs the same. A row address buffer having a first control signal applied to the set terminal and a second control signal of a high level for preventing the disable of the row address signal; A detection means for receiving a row address strobe signal and a color address strobe signal applied from an external device and outputting a refresh detection signal, wherein the refresh period setting is set in response to the row address strobe signal and the column address strobe signal. Refresh period setting means for generating a signal; Word line enable means for generating a word line enable signal in synchronization with the refresh period setting signal; A row decoder receiving the row address signal and decoding the row address signal to activate a word line corresponding thereto; Sense amplifier control means for receiving a row address strobe signal from the outside to control the sense amplifier; A column address buffer synchronized with a column address strobe signal applied from the outside and converting the column address signal at the TTL level into a column address signal at the CMOS level; A column decoder which receives a signal generated from the column address buffer and decodes it to activate a corresponding column line; And a sense amplifier configured to sense data of the selected cell in response to a control signal generated from the sense amplifier control means. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100636915-B1 |
| priorityDate | 1997-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID149563 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453034310 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID516892 |
Total number of triples: 11.