http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980079134-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980079134-A |
| titleOfInvention | Device Separation Method of Semiconductor Device |
| abstract | In the device isolation method of the semiconductor device of the present invention, after forming the first insulating layer pattern, the second insulating layer pattern, and the third insulating layer pattern exposing the field region of the semiconductor substrate, the semiconductor substrate is etched with an etching mask to the field region. Form a trench. A fourth insulating layer having a protrusion is formed on the active region except for the trench while the trench is buried by a plasma chemical vapor deposition (CVD) method in which deposition and etching are simultaneously performed on the entire surface of the trench. Subsequently, after forming a mask layer on the fourth insulating layer, a portion of the mask layer and the fourth insulating layer formed on the protrusion are removed to form a mask pattern exposing a portion of the fourth insulating layer on the active region. do. Next, the exposed fourth insulating layer is etched using the mask pattern as an etch mask to form a fourth insulating layer pattern exposing the second insulating layer pattern. The mask pattern is removed. Subsequently, etching the fourth insulating film pattern until the first insulating film pattern is exposed, and then removing the first insulating film pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100375229-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020060815-A |
| priorityDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.