http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980079121-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 |
| filingDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980079121-A |
| titleOfInvention | Capacitor Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method of manufacturing a ferroelectric capacitor of a semiconductor device. In the method of manufacturing a capacitor according to the present invention, a ferroelectric film, for example, a PZT film is formed on a lower electrode, and then the surface thereof is plasma treated before the upper electrode is formed. Subsequently, an upper electrode is formed to form a cell capacitor, and then the resultant is annealed. In the process of forming the ferroelectric film, the thickness may be formed at a desired thickness at a time, but may be formed over a plurality of times through a feed back as needed.n n n As a result, the electrical characteristics of the ferroelectric capacitor, for example, residual polarization and signal-to-noise ratio, can be much higher than before plasma treatment, while preventing leakage current characteristics from being lowered compared to before plasma treatment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010061314-A |
| priorityDate | 1997-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.