http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980073666-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1997-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980073666-A |
| titleOfInvention | Semiconductor Device Isolation Method |
| abstract | The present invention relates to a trench isolation method, in particular, a method of stacking a first insulating film (2) and a second insulating film (3) on a semiconductor substrate (1), and the semiconductor substrate (1) Partially exposing a surface, forming a third insulating film 4 on the exposed surface of the semiconductor substrate and a second insulating film, and performing anisotropic etching on the third insulating film to form the first insulating film 2. ) And sidewall spacers 4 'made of a third insulating film on the sidewalls of the second insulating film 3, and using the second insulating film 3 and the sidewall spacers 4' as masks. Etching the semiconductor substrate 1 to a predetermined depth, removing the trench 5, removing the sidewall spacers 4 ′, and high-density plasma chemical vapor deposition oxides in the trench 5. Filling Chemical Vapor Deposition (HDP CVD oxide) (6), It provides a semiconductor device isolation structure to sequentially conduct the step of removing the first insulation film group 2 and the second insulating film 3. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050031624-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010078576-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100829375-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100595859-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000066999-A |
| priorityDate | 1997-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 17.