http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980070266-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 1997-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980070266-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device and a method of manufacturing the same for easily realizing high speed and low power consumption in a sub-quarter micron region. ) And two MOS transistors in which the second gate electrode 16A is disposed in parallel to each other are formed, and the first n-type drain diffusion layer 20 and the second gate electrode 16A on the side of the first gate electrode 14A are formed. The second n-type source diffusion layer 20 on the side is connected in series. The first p-type diffusion layer 22 for high-density threshold control is formed in the source side portion of the channel region below the first n-type source diffusion layer 19 side of the first gate electrode 14A in the semiconductor substrate 11. ) Is formed, and the second p-type diffusion layer 23 for high threshold control is formed below the second n-type source diffusion layer 20 side of the second gate electrode 16A. |
| priorityDate | 1997-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104737 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419576148 |
Total number of triples: 13.