http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980068465-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1997-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980068465-A |
| titleOfInvention | Device Separation Method of Semiconductor Device |
| abstract | A device isolation method of a semiconductor device is disclosed. In the present invention, a hard mask pattern for exposing a field region is formed on the semiconductor substrate, the semiconductor substrate is etched using the hard mask pattern as an etch mask to form trenches in the field region, and deposition and etching are simultaneously performed on the entire surface of the resultant product. Forming an insulating film on which the protrusion is formed on the active region by a plasma chemical vapor deposition (CVD) method, forming a mask layer on the insulating film, and removing a part of the mask layer and the protrusion on the portion where the protrusion is formed in the insulating film, A mask pattern for partially exposing the insulating film is formed on the active region, the exposed insulating film is etched using the mask pattern as an etch mask to form an insulating film pattern, and the insulating film for device isolation is removed by removing the mask pattern and a part of the insulating film pattern. Form. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100700282-B1 |
| priorityDate | 1997-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.