http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980068062-A

Outgoing Links

Predicate Object
filingDate 1997-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1998-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19980068062-A
titleOfInvention Capacitor Manufacturing Method of Semiconductor Device
abstract The present invention relates to a method of manufacturing a capacitor of a semiconductor device.n n n According to the present invention, the lower electrode of the capacitor is formed of a first conductive layer pattern doped at a high concentration and a second conductive layer pattern doped at a lower concentration than the first conductive layer pattern. Thereafter, an HSG film is formed on the entire surface of the lower electrode, and first and second HSG films having different surface areas are formed according to the doping concentrations of the first and second conductive layers. In this way, after increasing the surface area of the lower electrode, in order to reduce the difference between the maximum value and the minimum value of the capacitance, the second doping is performed on the second conductive layer pattern whose primary doping is lower than that of the first conductive layer pattern. Increase the doping concentration. In this process, an HSG oxide film is formed on the entire surface of the HSG film. The oxide layer is removed after the second doping.n n n By doing so, not only the surface area of the lower electrode can be increased, but also the difference between the maximum value and the minimum value of the capacitance of the capacitor can be reduced, thereby stabilizing the operating characteristics of the capacitor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100451517-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100505455-B1
priorityDate 1997-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 19.