http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980064630-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 |
| filingDate | 1997-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980064630-A |
| titleOfInvention | Composition for antireflection film material and resist pattern formation method using same |
| abstract | In a lithographic process using various radiations, the present invention relates to a composition for antireflection film materials effective for reducing adverse effects due to reflection from a substrate, and a resist pattern forming method using the composition for antireflection film materials described above.n n n It has a large light absorption, good resolution and good film thickness dependence, and has a good resist pattern. It has a composition for antireflection film material having a large dry etching rate and a large dry etching speed, and has excellent light absorption, and has good resolution and thickness dependence. The resist pattern forming method and the antireflective effect of the photoresist with respect to the dimming light (especially 248 nm wavelength light) of the photoresist are high, and substantially no intermixing with the photoresist layer occurs, Provided are a photoresist antireflection film material composition and a method of forming a photoresist, in which there is no diffused material in a resist layer, and a resist pattern having a large dry etching rate compared to a photoresist and further having excellent resolution and post-film dependence is obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100942619-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100684146-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100604802-B1 |
| priorityDate | 1996-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 446.