http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980064093-A
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
filingDate | 1997-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-19980064093-A |
titleOfInvention | Semiconductor integrated circuit device and its manufacturing method |
abstract | Using the same photoresist pattern as a mask, the source and drain regions of the n-channel MOSFET 3n, the p-type semiconductor region 4p for suppressing the short channel effect, and the n well feed region 10n are formed in the semiconductor substrate 1. A process of implanting impurity ions for a source, a source / drain region of a p-channel MOS-FET 3p, an n-type semiconductor region 4n for suppressing short channel effects, and the like on the semiconductor substrate 1 using the same photoresist pattern as a mask; and implanting impurity ions for forming the p well power supply region 10p.n n n It is a manufacturing method of a semiconductor integrated circuit device in which an n-channel MIS transistor and a p-channel MIS transistor are provided on the same semiconductor substrate. |
priorityDate | 1996-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.