http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980063861-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 1997-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980063861-A |
| titleOfInvention | Method for growing nitride III-V compound semiconductor layer and method for manufacturing nitride III-V compound semiconductor substrate |
| abstract | A method for growing a nitride III-V group compound semiconductor layer includes growing a first B w Al x Ga y In z N layer (where 0? W? ) At a growth rate of 4 占 퐉 / h or less on a substrate by a first vapor deposition method; 1, 0≤x≤1, 0≤y≤1, 0≤z≤1, w + x + y + z = 1) and the growth process, wherein 1 B w A1 x Ga y In z N layer onto which the the method of claim of claim 2 B w A1 x Ga y in z N layer at a growth rate of 4㎛ / h or more 200㎛ / h or less by the second vapor deposition (where, 0≤w≤1, 0≤x≤1, 0≤ y? 1, 0? z? 1, w + x + y + z = 1). A method for growing a nitride III-V group compound semiconductor layer includes growing a first B w Al x Ga y In z N layer (where 0? W (n)) at a growth rate of 4 m / h or less by a first vapor deposition method on a substrate 1, 0? X? 1, 0? Y? 1, 0? Z? 1, w + x + y + z = 1); growing a first B w Al x Ga y In z N layer the second claim 2 B w A1 x Ga y in z N layer by 4㎛ / h or higher the growth rate of less than 200㎛ / h by a vapor deposition method on the (here, 0≤w≤1, 0≤x≤1, 0 ? Y? 1, 0? Z? 1, w + x + y + z = 1) and removing the substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100358428-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100755656-B1 |
| priorityDate | 1996-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.