http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980063317-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1997-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980063317-A |
| titleOfInvention | Device Separation Method of Semiconductor Device |
| abstract | Disclosed is a device isolation method of a semiconductor device. After forming a material film on a semiconductor substrate, the material film and the substrate are anisotropically etched to form a trench region, a first active region, and a second active region having a narrower width than the first active region. Subsequently, a first insulating film filling the trench region using plasma chemical vapor deposition (CVD), which allows deposition and etching to proceed simultaneously, a second insulating film on the first active region, and a second active region on the second active region. A triangular third insulating film is formed. Next, the first insulating film, the second insulating film, and the third insulating film are etched to expose the surface of the material film, and then the material film is etched using a lift-off method to remove the third and second insulating films. It includes. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100476372-B1 |
| priorityDate | 1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.