http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980060644-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 1996-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980060644-A |
| titleOfInvention | How to flatten F. Ram |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a planarization method of an F.ram, wherein a ferroelectric film is formed of a dielectric film and the top and bottom electrodes are made of metal to planarize the top of a semiconductor substrate on which a ferroelectric capacitor is formed. In the method, the upper electrode, the ferroelectric film and the lower electrode is etched and patterned, a water barrier layer is formed on the entire surface of the semiconductor substrate, the surface of the semiconductor substrate is hydrophilized and SiH on the level barrier layer to form a 4 -H 2 O 2 USG insulating film, and then, a heat treatment step of forming a protective film on the SiH 4 -H 2 O 2 USG upper insulating film and removing the moisture contained in the inside of the SiH 4 -H 2 O 2 USG insulating By flattening by flattening at low temperature without damage by plasma, it is possible to prevent deterioration of characteristics of semiconductor devices, thereby improving device characteristics and reliability. Technology. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100883135-B1 |
| priorityDate | 1996-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.