http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980053692-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980053692-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | The present invention can not only improve the embedding characteristics of the metal layer in the contact hole by reducing the wiring resistance by performing sufficient excessive etching during the etching back of the plug metal film embedded in the contact hole when forming the metal wiring using the contact plug. A method of forming a metal wiring of a semiconductor device, comprising: forming an insulating film on a semiconductor substrate on which a conductive layer pattern is formed; Etching the insulating film on the conductive layer pattern to expose a predetermined portion of the conductive layer pattern to form a contact hole; Forming a barrier metal film on the contact hole bottom and both sidewalls and the insulating film; Forming a first aluminum alloy film on the barrier metal film; Forming a plug metal film on the entire surface of the substrate to be filled in the contact hole in which the first aluminum alloy film and the barrier metal film are formed; Etching back the plug metal film to expose the first aluminum alloy film; And forming a second aluminum alloy film on the plug metal film and the first aluminum alloy film. |
| priorityDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.