http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980053659-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980053659-A |
| titleOfInvention | Capacitor of semiconductor device and manufacturing method thereof |
| abstract | The present invention provides a capacitor and a method for manufacturing the semiconductor device capable of securing the capacitance of the capacitor corresponding to the highly integrated device by forming a plate electrode in a structure in which a TiO 2 film is used as a dielectric film and a WN film and a polysilicon film are laminated. The capacitor of the semiconductor device according to the present invention includes a semiconductor substrate having a gate insulating film and a gate, and a source and a drain region; An insulating film formed on the substrate and having a predetermined contact hole exposing a source region; A storage node electrode formed in the contact hole and on both sidewalls and the insulating film; A dielectric film formed on the storage node electrode and composed of a TiO 2 film; And a plate electrode formed on the dielectric film and having a structure in which the WN film and the polysilicon film are laminated. |
| priorityDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.