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filingDate 1996-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1998-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19980048803-A
titleOfInvention Aluminum composition for analysis of aluminum film on wafer for semiconductor manufacturing and aluminum film analysis method using the same
abstract The present invention relates to an aluminum composition for analyzing an aluminum film on a wafer for semiconductor manufacturing and an aluminum film analyzing method using the same.n n n The aluminum composition for aluminum film analysis on the wafer for semiconductor manufacturing according to the present invention for achieving the above object is made by mixing phosphoric acid and deionized water, and the aluminum film analysis method on the wafer for semiconductor manufacturing (A) to form an aluminum film A protective film forming step of forming a protective film on the wafer; (B) an aluminum film deposition step of depositing an aluminum film on the protective film of the wafer; (C) a dissolution step of dipping the wafer on which the aluminum film is formed in the aluminum film deposition step of (b) into a heated aluminum composition, and dissolving the aluminum film until the color of the surface of the wafer changes; (D) washing with water, in which the aluminum film is dissolved and removed, and washed with water; (E) a drying step of removing water remaining on the wafer surface after washing with water; And (f) an analysis step of analyzing the composition and distribution of the crystallized matter by magnifying the surface of the wafer on which the surface is dried.
priorityDate 1996-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.