http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980048607-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980048607-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | TECHNICAL FIELD This invention relates to the manufacturing method of a semiconductor element. Specifically, It is related with the technique of improving the characteristic of the SOG film used as an interlayer insulation film. The present invention provides the SOG etched back by the gases in order to prevent the carbon, hydrogen or fluorine gas used in the etchback process of the SOG film from remaining on the surface of the SOG film to cause phenomena such as hot carrier effect and field inversion. By plasma treatment of the film using Ar gas, the reliability of the device can be improved. |
| priorityDate | 1996-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 13.