http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980047652-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1996-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980047652-A |
| titleOfInvention | Polysilicon Etching Method |
| abstract | The present invention relates to a method of etching polycrystalline silicon, comprising the steps of forming an oxide film on a semiconductor substrate, forming a polycrystalline silicon layer doped with impurities on the oxide film, and forming a photoresist film on a predetermined portion on the polycrystalline silicon layer; Using the photosensitive film as a mask and adding N 2 to Cl 2 / O 2 , which is an etching gas, to dry-etch and pattern the polysilicon layer.n n n Therefore, since a separate device is not required, the occurrence of the notching phenomenon can be prevented while reducing the cost. |
| priorityDate | 1996-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 |
Total number of triples: 12.