http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980041890-A

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filingDate 1997-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1998-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19980041890-A
titleOfInvention Metallurgical interconnect system and its manufacturing method and integrated circuit chip manufacturing method
abstract The present invention relates to an integrated circuit chip wiring structure having a crossover and contact force without a connecting via layer, and a method of manufacturing the wiring structure. The method uses a multi-damascene approach, first using standard damascene processing steps for the wire, then the metal layer, and then providing a first region for the metal wire in the thick second metal layer. By conforming coating, the second area is filled but the first area is not. Etching is performed to expose the layer below the first region but not the layer below the second region. Thus, it becomes possible to selectively expose the metal lines of the first layer, thereby enabling electrical connection with the metal wires of the second layer in the exposed areas. Electrical insulation is maintained in the narrower second region of the metal wire.
priorityDate 1996-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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