http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980041869-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980041869-A |
| titleOfInvention | Microporous structure, use thereof and method for producing same |
| abstract | A method of forming an integrated circuit device including a microcavity structure and a microporous structure is disclosed. The present invention includes a layer or substrate having a topography, such as a pair of raised features. A pore forming material, such as Boro-Phosphorous Silicate Glass (BPSG), is deposited on the substrate to form voids in the substrate. A fixed material having a relatively higher density than the pore forming material is deposited over the pore forming material. The materials are then annealed by a method such as Rapid Thermal Anneal (RTA). The materials are then polished, for example by chemical mechanical polishing (CMP) to expose the top of the voids. The pores are then etched using an anisotropic etching method such as reactive ion etching (RIE) to remove the pore forming material. This method may be used to provide self-aligned contact vias. |
| priorityDate | 1996-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.