http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980041090-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980041090-A |
| titleOfInvention | Method of manufacturing thin film transistor of thin film transistor liquid crystal display |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a TFT in a TFT-LCD, wherein when a high concentration impurity region is formed on a surface of a semiconductor layer pattern and used as a source / drain region for ohmic contact, an impurity gas plasma is used. Exposed to impurity ions to diffuse and heat treatment to activate it, there is no need to use a separate ion implantation equipment to reduce the manufacturing cost, the surface of the semiconductor layer does not damage the leakage current is reduced, the heat treatment temperature is It can be reduced to improve process yield and reliability of device operation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100737910-B1 |
| priorityDate | 1996-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 11.