http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980028734-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1996-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980028734-A |
| titleOfInvention | Planarization method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a planarization method of a semiconductor device, wherein an internal insulating film is formed on a semiconductor substrate having a fine pattern at a predetermined thickness, and an ozone tetra-ethyl-ortho- is formed on the internal insulating film. Silicate Undoped-Silicate Glass (hereinafter referred to as ozone-TEOS USG) is formed to a certain thickness, and then SOG insulating film is formed on the ozone-TEOS USG, and the SOG insulating film is cured and planarized to facilitate the subsequent process. It is possible to improve the characteristics and reliability of the semiconductor device and thereby high integration of the semiconductor device. |
| priorityDate | 1996-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.