http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980028625-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1996-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980028625-A |
| titleOfInvention | Method for forming interlayer insulating film of semiconductor device |
| abstract | 1. TECHNICAL FIELD OF THE INVENTIONn n n Semiconductor device manufacturing field.n n n 2. Technical problem to be solved by the inventionn n n To improve the hygroscopicity of low-k dielectric thin films and to shorten the process time.n n n 3. Summary of the Solution of the Inventionn n n After depositing a low dielectric silicon fluoride oxide film (SiOxFy, SiOF) with a plasma reaction gas, the surface of the silicon fluoride oxide film is nitrided in a nitrogen plasma atmosphere in the same reaction chamber.n n n 4. Important uses of the inventionn n n Formation of interlayer insulating film of semiconductor device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100672769-B1 |
| priorityDate | 1996-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.